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Document type : Books
Deposit type : Notice
hal_authIdPerson_i : 171390

A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range

D. Bauza
in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008
Books hal-00391851v1