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A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm rangein 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008
Books
hal-00391851v1
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Optoélectronique térahertzCoutaz, Jean-Louis. EDP Sciences, pp.360, 2008, 978-2-86883-975-6
Books
hal-00393993v1
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