Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs.
L. Pham-Nguyen
,
C. Fenouillet-Beranger
,
A. Vandooren
,
A. Wild
,
G. Ghibaudo
et al.
IEEE International SOI Conference, New Paltz, New York USA , Nov 2008, New York, United States
Conference papers
hal-00392447v1
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The Ge condensation technique: a solution for planar SOI/GeOI co-integration for advanced CMOS technologies?
B. Vincent
,
J.F. Damlencourt
,
Y. Morand
,
A. Pouydebasque
,
C. Le Royer
et al.
Materials Research Society (E-MRS 2008), Symposium J, Strasbourg, France (26-30 mai 2008), Materials Science in Semiconductor Processing, Elsevier, XX3-10 (2008) , May 2008, -, France
Conference papers
hal-00391979v1
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A systematic investigation of work function in advanced metal gate HfO2/SiO2 structures with bevel oxide
A. Kuriyama
,
J. Mitard
,
O. Faynot
,
L. Brevard
,
L. Clerc
et al.
Solid-State Electronics , 2007, 51 (11-12), pp.1515-1522
Journal articles
hal-00393685v1
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Impact of free surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization
G. Hamaide
,
F. Allibert
,
H. Hovel
,
S. Cristoloveanu
Journ. Appl. Phys , 2007, 101 (11), pp.114513:1-6
Journal articles
hal-00393059v1
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Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films
C. Dupré
,
T. Ernst
,
J.-M. Hartmann
,
F. Andrieu
,
J.-P. Barnes
et al.
Journ. Appl. Phys , 2007, 102 (10), pp.104505:1-8
Journal articles
hal-00393080v1
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Pseudo-MOSFET substrate effects of drain current hysteresis and transient nehavior
P. Kihoon
,
P. Nayak
,
S. Cristoloveanu
,
D.K. Schroder
IEEE Transactions on Electron Devices , 2009, 56 (6), pp.1269-1276
Journal articles
hal-00596088v1
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Three-interface pseudo-MOSFET model : application to ultrathin BOX SOI wafers.
N. Rodriguez
,
S. Cristoloveanu
,
F. Gamiz
5th EUROSOI Workshop , Jan 2009, Göteborg, Sweden
Conference papers
hal-00603740v1
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Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs.
W. van den Daele
,
C. Le Royer
,
J. Mitard
,
G. Ghibaudo
,
S. Cristoloveanu
et al.
6th EUROSOI Workshop , Jan 2010, Grenoble, France
Conference papers
hal-00604533v1
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Improved GeOI substrates for pMOSFET off-state leakage control
K. Romanjek
,
E. Augendre
,
W. van den Daele
,
B. Grandchamp
,
L. Sanchez
et al.
International Conference on Insulating Films on Semiconductors (INFOS), , Jul 2009, Cambridge, United Kingdom
Conference papers
hal-00603830v1
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Parasitic back-inferface conduction in planar and triple-gate SOI transistors
R. Ritzenthaler
,
F. Lime
,
M. Ricoma
,
F. Martinez
,
O. Faynot
et al.
2010 IEEE International SOI Conference , Oct 2010, San Diego, California, United States
Conference papers
hal-00604642v1
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Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator.
S.-J. Chang
,
K.-I. Na
,
M. Bawedin
,
Y.-H. Bae
,
K.-H. Park
et al.
2010 IEEE International SOI Conference , Oct 2010, San Diego, California, United States
Conference papers
hal-00604643v1
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Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance.
W. van den Daele
,
C. Le Royer
,
E. Augendre
,
G. Ghibaudo
,
S. Cristoloveanu
et al.
2010 IEEE International SOI Conference , Oct 2010, San Diego, California, United States
Conference papers
hal-00604645v1
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Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling
W. van den Daele
,
C. Malaquin
,
N. Baumel
,
O. Kononchuk
,
S. Cristoloveanu
et al.
Journal articles
hal-01017535v1
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Remote carrier trapping in FinFETs with ONO buried oxide : temperature effects
S.J. Chang
,
M. Bawedin
,
W. Xiong
,
J.H. Lee
,
S. Cristoloveanu
et al.
Journal articles
hal-01019931v1
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Silicon On Insulator Technology
S. Cristoloveanu
Silicon On Insulator Technology , Chapter in The VLSI Handbook, Second Edition, W–K. Chen ed., CRC Press & IEEE Press, pp.XX, 2006
Book sections
hal-00148992v1
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Selected characterization techniques for SOI materials and devices.
S. Cristoloveanu
Graduated Student Meeting on Electronic Engineering, Tarragona, Spain , Jun 2008, -, Spain
Conference papers
hal-00392099v1
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A revisited pseudo-MOSFET model for ultrathin SOI films.
N. Rodriguez
,
S. Cristoloveanu
,
F. Gamiz
IEEE International SOI Conference, New Paltz, New York, USA , Oct 2008, New York, United States
Conference papers
hal-00392085v1
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Transient radiation response of single- and multiple-gate FDSOI transistors to pulsed laser and heavy ion irradiation
M. Gaillardin
,
P. Paillet
,
V. Ferlet-Cavrois
,
J. Baggio
,
D. Mcmorrow
et al.
IEEE Transactions on Nuclear Science , 2007, 54 (6), pp.2355-2362
Journal articles
hal-00392930v1
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Depletion-all-around operation of the SOI four-gate transistor
K. Akarvardar
,
S. Cristoloveanu
,
P. Gentil
,
R.D. Schrimpf
,
B.J Blalock
et al.
IEEE Transactions on Electron Devices , 2007, 54 (2), pp.323-331
Journal articles
hal-00392853v1
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Advanced GeOI structures: from material properties to high performance pMOSFETs.
W. van den Daele
,
E. Augendre
,
L. Clavelier
,
E. Guiot
,
F. Allibert
et al.
Fringe workshop ESSDERC 08, Edinburgh , Sep 2008, Edinburgh, Ireland
Conference papers
hal-00391992v1
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Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices
F.E. Mamouni
,
S.K. Dixit
,
R.D. Scrimpf
,
P.C. Adell
,
Is Esqueda
et al.
IEEE Transactions on Nuclear Science , 2008, 55 (6), pp.3259-3264
Journal articles
hal-00392655v1
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Evidence of radiation induced dopant neutralization in partially-depleted SOI NMOSFETs,
K. Akarvardar
,
R. Schrimpf
,
D. Fleetwood
,
S. Cristoloveanu
,
P. Gentil
et al.
IEEE Transactions on Nuclear Science , 2007, 54 (6), pp.1920-1924
Journal articles
hal-00392924v1
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Revisited Pseudo-MOSFET models for characterization of ultrathin SOI wafers
N. Rodrriguez
,
S. Cristoloveanu
,
F. Gamiz
IEEE Transactions on Electron Devices , 2009, 56 (7), pp.1507-1515
Journal articles
hal-00596086v1
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The Corbino Pseudo-MOSFET on SOI: measurements, model, and applications.
S. Cristoloveanu
,
T.V. Chandrasekhar Rao
,
Q.T. Nguyen
,
J. Antoszewski
,
H. Hovel
et al.
IEEE Transactions on Electron Devices , 2009, 56 (3), pp.474-482
Journal articles
hal-00596090v1
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Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs
F. Mamouni F.
,
E.X. Zhang
,
R.D. Schrimpf
,
D.M. Fleetwood
,
R.A. Reed
et al.
IEEE Transactions on Nuclear Science , 2009, 56 (6), pp.3250-3255
Journal articles
hal-00596095v1
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Mobility enhancement by CESL strain in SOI MOSFETs. Euro-SOI
L. Pham-Nguyen
,
C. Fenouillet-Beranger
,
G. Ghibaudo
,
S. Cristoloveanu
5th EUROSOI Workshop , Jan 2009, Göteborg, Sweden
Conference papers
hal-00603735v1
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Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)
C. Dupré
,
T. Ernst
,
E. Bernard
,
B. Guillaumot
,
N. Vulliet
et al.
Solid-State Electronics , 2009, 53, pp.746-752
Journal articles
hal-00596162v1
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Magnetoresistance technique for mobility extraction in triple gate FinFETs at low temperature.
C.D.G. dos Santos
,
S. Cristoloveanu
,
Duncan Kennedy Maude
,
J.A. Martino
6th EUROSOI Workshop , Jan 2010, Grenoble, France
Conference papers
hal-00604519v1
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GeOI as a platform for ultimate devices.
W. van den Daele
,
S. Cristoloveanu
,
E. Augendre
,
C. Le Royer
,
J.-F. Damlencourt
et al.
Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy , 2010, Wiley, Hoboken,, United States
Conference papers
hal-00604536v1
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Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires
K. Tachi
,
M. Casse
,
D. Jang
,
C. Dupré
,
A. Hubert
et al.
IEEE International Electron Devices Meeting , Dec 2009, Balitimore, United States
Conference papers
hal-00603809v1
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