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hal_authIdPerson_i : 172108

Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs.

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , A. Wild , G. Ghibaudo et al.
IEEE International SOI Conference, New Paltz, New York USA, Nov 2008, New York, United States
Conference papers hal-00392447v1

The Ge condensation technique: a solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

B. Vincent , J.F. Damlencourt , Y. Morand , A. Pouydebasque , C. Le Royer et al.
Materials Research Society (E-MRS 2008), Symposium J, Strasbourg, France (26-30 mai 2008), Materials Science in Semiconductor Processing, Elsevier, XX3-10 (2008), May 2008, -, France
Conference papers hal-00391979v1

A systematic investigation of work function in advanced metal gate HfO2/SiO2 structures with bevel oxide

A. Kuriyama , J. Mitard , O. Faynot , L. Brevard , L. Clerc et al.
Solid-State Electronics, 2007, 51 (11-12), pp.1515-1522
Journal articles hal-00393685v1

Impact of free surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization

G. Hamaide , F. Allibert , H. Hovel , S. Cristoloveanu
Journ. Appl. Phys, 2007, 101 (11), pp.114513:1-6
Journal articles hal-00393059v1

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

C. Dupré , T. Ernst , J.-M. Hartmann , F. Andrieu , J.-P. Barnes et al.
Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8
Journal articles hal-00393080v1

Pseudo-MOSFET substrate effects of drain current hysteresis and transient nehavior

P. Kihoon , P. Nayak , S. Cristoloveanu , D.K. Schroder
IEEE Transactions on Electron Devices, 2009, 56 (6), pp.1269-1276
Journal articles hal-00596088v1

Three-interface pseudo-MOSFET model : application to ultrathin BOX SOI wafers.

N. Rodriguez , S. Cristoloveanu , F. Gamiz
5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden
Conference papers hal-00603740v1

Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs.

W. van den Daele , C. Le Royer , J. Mitard , G. Ghibaudo , S. Cristoloveanu et al.
6th EUROSOI Workshop, Jan 2010, Grenoble, France
Conference papers hal-00604533v1

Improved GeOI substrates for pMOSFET off-state leakage control

K. Romanjek , E. Augendre , W. van den Daele , B. Grandchamp , L. Sanchez et al.
International Conference on Insulating Films on Semiconductors (INFOS),, Jul 2009, Cambridge, United Kingdom
Conference papers hal-00603830v1

Parasitic back-inferface conduction in planar and triple-gate SOI transistors

R. Ritzenthaler , F. Lime , M. Ricoma , F. Martinez , O. Faynot et al.
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers hal-00604642v1

Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator.

S.-J. Chang , K.-I. Na , M. Bawedin , Y.-H. Bae , K.-H. Park et al.
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers hal-00604643v1

Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance.

W. van den Daele , C. Le Royer , E. Augendre , G. Ghibaudo , S. Cristoloveanu et al.
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers hal-00604645v1

Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling

W. van den Daele , C. Malaquin , N. Baumel , O. Kononchuk , S. Cristoloveanu et al.
Journ. Appl. Phys., 2013, 114 (16), pp.164502:1-9. ⟨10.1063/1.4826631⟩
Journal articles hal-01017535v1

Remote carrier trapping in FinFETs with ONO buried oxide : temperature effects

S.J. Chang , M. Bawedin , W. Xiong , J.H. Lee , S. Cristoloveanu et al.
Microelectronics Reliability, 2013, 53 (Issue3), pp.386-393. ⟨10.1016/j.microrel.2012.10.002⟩
Journal articles hal-01019931v1

Silicon On Insulator Technology

S. Cristoloveanu
Silicon On Insulator Technology, Chapter in The VLSI Handbook, Second Edition, W–K. Chen ed., CRC Press & IEEE Press, pp.XX, 2006
Book sections hal-00148992v1

Selected characterization techniques for SOI materials and devices.

S. Cristoloveanu
Graduated Student Meeting on Electronic Engineering, Tarragona, Spain, Jun 2008, -, Spain
Conference papers hal-00392099v1

A revisited pseudo-MOSFET model for ultrathin SOI films.

N. Rodriguez , S. Cristoloveanu , F. Gamiz
IEEE International SOI Conference, New Paltz, New York, USA, Oct 2008, New York, United States
Conference papers hal-00392085v1

Transient radiation response of single- and multiple-gate FDSOI transistors to pulsed laser and heavy ion irradiation

M. Gaillardin , P. Paillet , V. Ferlet-Cavrois , J. Baggio , D. Mcmorrow et al.
IEEE Transactions on Nuclear Science, 2007, 54 (6), pp.2355-2362
Journal articles hal-00392930v1

Depletion-all-around operation of the SOI four-gate transistor

K. Akarvardar , S. Cristoloveanu , P. Gentil , R.D. Schrimpf , B.J Blalock et al.
IEEE Transactions on Electron Devices, 2007, 54 (2), pp.323-331
Journal articles hal-00392853v1

Advanced GeOI structures: from material properties to high performance pMOSFETs.

W. van den Daele , E. Augendre , L. Clavelier , E. Guiot , F. Allibert et al.
Fringe workshop ESSDERC 08, Edinburgh, Sep 2008, Edinburgh, Ireland
Conference papers hal-00391992v1

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

F.E. Mamouni , S.K. Dixit , R.D. Scrimpf , P.C. Adell , Is Esqueda et al.
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.3259-3264
Journal articles hal-00392655v1

Evidence of radiation induced dopant neutralization in partially-depleted SOI NMOSFETs,

K. Akarvardar , R. Schrimpf , D. Fleetwood , S. Cristoloveanu , P. Gentil et al.
IEEE Transactions on Nuclear Science, 2007, 54 (6), pp.1920-1924
Journal articles hal-00392924v1

Revisited Pseudo-MOSFET models for characterization of ultrathin SOI wafers

N. Rodrriguez , S. Cristoloveanu , F. Gamiz
IEEE Transactions on Electron Devices, 2009, 56 (7), pp.1507-1515
Journal articles hal-00596086v1

The Corbino Pseudo-MOSFET on SOI: measurements, model, and applications.

S. Cristoloveanu , T.V. Chandrasekhar Rao , Q.T. Nguyen , J. Antoszewski , H. Hovel et al.
IEEE Transactions on Electron Devices, 2009, 56 (3), pp.474-482
Journal articles hal-00596090v1

Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs

F. Mamouni F. , E.X. Zhang , R.D. Schrimpf , D.M. Fleetwood , R.A. Reed et al.
IEEE Transactions on Nuclear Science, 2009, 56 (6), pp.3250-3255
Journal articles hal-00596095v1

Mobility enhancement by CESL strain in SOI MOSFETs. Euro-SOI

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , S. Cristoloveanu
5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden
Conference papers hal-00603735v1

Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet et al.
Solid-State Electronics, 2009, 53, pp.746-752
Journal articles hal-00596162v1

Magnetoresistance technique for mobility extraction in triple gate FinFETs at low temperature.

C.D.G. dos Santos , S. Cristoloveanu , Duncan Kennedy Maude , J.A. Martino
6th EUROSOI Workshop, Jan 2010, Grenoble, France
Conference papers hal-00604519v1

GeOI as a platform for ultimate devices.

W. van den Daele , S. Cristoloveanu , E. Augendre , C. Le Royer , J.-F. Damlencourt et al.
Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy, 2010, Wiley, Hoboken,, United States
Conference papers hal-00604536v1

Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

K. Tachi , M. Casse , D. Jang , C. Dupré , A. Hubert et al.
IEEE International Electron Devices Meeting, Dec 2009, Balitimore, United States
Conference papers hal-00603809v1