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Physical and Electrical Properties of Thin Doped Silicon Films Obtained by Low Temperature Smart Cut and Solid Phase EpitaxyECS Journal of Solid State Science and Technology, 2013, 2 (12), pp.P534-P538. ⟨10.1149/2.012312jss⟩
Journal articles
hal-00991672v1
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Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETs43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.296-299, ⟨10.1109/ESSDERC.2013.6818877⟩
Conference papers
hal-01021209v1
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Normally-off GaN MOSFETs on insulating substrateSolid-State Electronics, 2013, 90, pp.79-85. ⟨10.1016/j.sse.2013.02.048⟩
Journal articles
hal-01002147v1
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Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistorsSolid-State Electronics, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.040⟩
Journal articles
hal-01002106v1
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Correlation of Pseudo-MOS transistor and Hall effect measurements in thin SOI wafersCom. a 2006 Conf. on Optoelectronic and Microelectronic Materials and Devices COMMAD.06), Short Course on Nanoelectronics, 2006, Grenoble, France. pp.XX
Conference papers
hal-00146925v1
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A model of fringing fields in short-channel planar and triple-gate SOI MOSFETsIEEE Transactions on Electron Devices, 2007, 54 (6), pp.1366-1375
Journal articles
hal-00392888v1
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Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperatureSolid-State Electronics, 2007, 51(2), pp.252-9
Journal articles
hal-00393604v1
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Introduction of diamond into advanced FDSOI CMOS4th EUROSOI Workshop, Cork, Ireland, Jan 2008, Cork, Ireland
Conference papers
hal-00392049v1
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Tuning the electrostatic properties of silicon-on-insulating multilayer (SOIM) structures10th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, Joint Meeting (214th ECS Meeting and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Honolulu, Hawaii, USA, Oct 2008, -, France
Conference papers
hal-00392058v1
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Impact of surface and buried interface passivation on ultrathin SOI electrical propertiesIEEE International SOI Conference, New Paltz, New York, USA, Oct 2008, New-York, United States
Conference papers
hal-00392096v1
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A Mobility Extraction Method for 3D Multichannel Devices.38th European Solid-State Device Research Conference (ESSDERC'08),, Sep 2008, Grenoble, France
Conference papers
hal-00391984v1
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Analytical modelling of short channel planar FDSOI and triple-gateFET transistors.MOS-AK/GSA Workshop 'Frontiers of the Compact Modeling for Advanced Analog/ RF Applications', 40th European Solid-State Device Research Conference (ESSDERC'10),, Sep 2010, Seville, Spain
Conference papers
hal-00604932v1
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Physics and Technology of Multiple-Gate MOSFETsIEEE Electron Device Society Mini-Colloquium XX, May 2010, Lublin, Poland
Conference papers
hal-00604761v1
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Characterization techniques for SOI materials and transistors.1st Korean International Summer School on Nanoelectronics (nano-KISS 2010) SOI Technology : Materials, Devices, and Applications,, Apr 2010, Daegu, South Korea
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hal-00604936v1
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Electrical Transport characterization of nano CMOS devices with ultra-thin silicon film.to be published, IEEE Conference Proceedings (2009), 2009, kyoto, Japan
Conference papers
hal-00603879v1
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Exploiting SOICMOS for the extreme environments of future space missions.2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers
hal-00604584v1
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Partially depleted double-gate 1T-DRAM cell using nonvolatile memory function for improved performance.6th EUROSOI Workshop, Jan 2010, Grenoble, France
Conference papers
hal-00604525v1
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Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannelSolid-State Electronics, 2013, 89, pp.124-127. ⟨10.1016/j.sse.2013.08.001⟩
Journal articles
hal-01002158v1
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Progress in Z(2)-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storageSolid-State Electronics, 2013, 84, pp.147-154. ⟨10.1016/j.sse.2013.02.010⟩
Journal articles
hal-01002162v1
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A systematic study of the sharp-switching Z(2)-FET device: From mechanism to modeling and compact memory applicationsSolid-State Electronics, 2013, 90, pp.2-11. ⟨10.1016/j.sse.2013.02.060⟩
Journal articles
hal-01001944v1
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Capacitance-voltage characterization of surface-treated Al2O3/GaN metal-oxide-semiconductor structuresMicroelectronic Engineering, 2013, 109, pp.10-12. ⟨10.1016/j.mee.2013.03.108⟩
Journal articles
hal-00996410v1
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Mobility Extraction in Double-Gate MOSFETs by Magnetoresistance Technique (poster)Journées "Simulation et caractérisation des nanocomposants" du GDR Nanoélectronique, 2006, Grenoble, France. pp.XX
Conference papers
hal-00148279v1
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Ultra-thin fully depleted SOI devices with thin BOX, ground plane and strained liner boosterCom. a 2006 IEEE Int. SOI Conf, 2006, Grenoble, France. pp.XX
Conference papers
hal-00146905v1
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A capacitor-less 1T-DRAM on SOI based on double gate operationIEEE Electron Device Letters, 2008, 29 (7, 795-798)
Journal articles
hal-00391609v1
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High hole mobility SGOI substrates obtained by the germanium condensation technique.3rd International Symposium on SiGe, Ge and Related Compounds: Materials, Processing, and Devices, Joint Meeting (214th ECS Meeting and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Honolulu, Hawaii, USA, Oct 2008, Honolulu, United States. pp.79-89
Conference papers
hal-00392062v1
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Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs.IEEE International SOI Conference, New Paltz, New York USA, Nov 2008, New York, United States
Conference papers
hal-00392447v1
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The Ge condensation technique: a solution for planar SOI/GeOI co-integration for advanced CMOS technologies?Materials Research Society (E-MRS 2008), Symposium J, Strasbourg, France (26-30 mai 2008), Materials Science in Semiconductor Processing, Elsevier, XX3-10 (2008), May 2008, -, France
Conference papers
hal-00391979v1
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3D size effects in advanced SOI devicesWorld Scientific, Selected Topics in Electronics and Systems. 3D size effects in advanced SOI devices, Frontiers in Electronics, pp.9-30, 2006
Book sections
hal-00148994v1
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Polarization transient response of unibond buried oxide layerEUROSOI Conference, 2006, GRENOBLE, France. pp.XX
Conference papers
hal-00147160v1
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A systematic investigation of work function in advanced metal gate HfO2/SiO2 structures with bevel oxideSolid-State Electronics, 2007, 51 (11-12), pp.1515-1522
Journal articles
hal-00393685v1
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