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hal_authIdPerson_i : 172108

Physical and Electrical Properties of Thin Doped Silicon Films Obtained by Low Temperature Smart Cut and Solid Phase Epitaxy

G. Gaudin , W. van den Daele , N. Chartrain , G. Riou , C. Veytizou et al.
ECS Journal of Solid State Science and Technology, 2013, 2 (12), pp.P534-P538. ⟨10.1149/2.012312jss⟩
Journal articles hal-00991672v1

Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETs

S.-J. Chang , S. Cristoloveanu , M. Bawedin , J.-H. Lee , S. Mukhopadhyay et al.
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.296-299, ⟨10.1109/ESSDERC.2013.6818877⟩
Conference papers hal-01021209v1

Normally-off GaN MOSFETs on insulating substrate

K.S. Im , K.W. Kim , D.K. Kim , S.J. Chang , Y. Bae et al.
Solid-State Electronics, 2013, 90, pp.79-85. ⟨10.1016/j.sse.2013.02.048⟩
Journal articles hal-01002147v1

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

S.J. Chang , M. Cheralathan , M. Bawedin , B. Iniguez , B. Bayraktaroglu et al.
Solid-State Electronics, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.040⟩
Journal articles hal-01002106v1

Correlation of Pseudo-MOS transistor and Hall effect measurements in thin SOI wafers

Q.T. Nguyen , J. Antoszewski , L. Faraone , N. Bresson , P. Gentil et al.
Com. a 2006 Conf. on Optoelectronic and Microelectronic Materials and Devices COMMAD.06), Short Course on Nanoelectronics, 2006, Grenoble, France. pp.XX
Conference papers hal-00146925v1

A model of fringing fields in short-channel planar and triple-gate SOI MOSFETs

T. Ernst , R. Ritzenthaler , O. Faynot , S. Cristoloveanu
IEEE Transactions on Electron Devices, 2007, 54 (6), pp.1366-1375
Journal articles hal-00392888v1

Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperature

S. Zaouia , S. Cristoloveanu , M. Sureddin , S. Goktepeli , A.H. Perera et al.
Solid-State Electronics, 2007, 51(2), pp.252-9
Journal articles hal-00393604v1

Introduction of diamond into advanced FDSOI CMOS

J.P. Mazellier , O. Faynot , F. Andrieu , S. Cristoloveanu , S. Deleonibus et al.
4th EUROSOI Workshop, Cork, Ireland, Jan 2008, Cork, Ireland
Conference papers hal-00392049v1

Tuning the electrostatic properties of silicon-on-insulating multilayer (SOIM) structures

M. Kostrzewa , T. Nguyen , J. Mazellier , C. Deguet , L. Clavelier et al.
10th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, Joint Meeting (214th ECS Meeting and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Honolulu, Hawaii, USA, Oct 2008, -, France
Conference papers hal-00392058v1

Impact of surface and buried interface passivation on ultrathin SOI electrical properties

G. Hamaide , F. Allibert , S. Cristoloveanu
IEEE International SOI Conference, New Paltz, New York, USA, Oct 2008, New-York, United States
Conference papers hal-00392096v1

A Mobility Extraction Method for 3D Multichannel Devices.

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet et al.
38th European Solid-State Device Research Conference (ESSDERC'08),, Sep 2008, Grenoble, France
Conference papers hal-00391984v1

Analytical modelling of short channel planar FDSOI and triple-gateFET transistors.

R. Ritzenthaler , F. Lime , O. Faynot , S. Cristoloveanu , B. Iniguez et al.
MOS-AK/GSA Workshop 'Frontiers of the Compact Modeling for Advanced Analog/ RF Applications', 40th European Solid-State Device Research Conference (ESSDERC'10),, Sep 2010, Seville, Spain
Conference papers hal-00604932v1

Physics and Technology of Multiple-Gate MOSFETs

S. Cristoloveanu
IEEE Electron Device Society Mini-Colloquium XX, May 2010, Lublin, Poland
Conference papers hal-00604761v1

Characterization techniques for SOI materials and transistors.

S. Cristoloveanu
1st Korean International Summer School on Nanoelectronics (nano-KISS 2010) SOI Technology : Materials, Devices, and Applications,, Apr 2010, Daegu, South Korea
Conference papers hal-00604936v1

Electrical Transport characterization of nano CMOS devices with ultra-thin silicon film.

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas et al.
to be published, IEEE Conference Proceedings (2009), 2009, kyoto, Japan
Conference papers hal-00603879v1

Exploiting SOICMOS for the extreme environments of future space missions.

M. Mojararradi , S. Cristoloveanu , B. Blalock , E. Kolawa
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers hal-00604584v1

Partially depleted double-gate 1T-DRAM cell using nonvolatile memory function for improved performance.

K.-H. Park , S. Cristoloveanu , M. Bawedin , Y.-H. Bae , K.-I. Na et al.
6th EUROSOI Workshop, Jan 2010, Grenoble, France
Conference papers hal-00604525v1

Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel

K. S. Im , D.H. Son , H.K. Ahn , Hk. Bae , Sb. Mun et al.
Solid-State Electronics, 2013, 89, pp.124-127. ⟨10.1016/j.sse.2013.08.001⟩
Journal articles hal-01002158v1

Progress in Z(2)-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage

J. Wan , C. Le Royer , A. Zaslavsky , S. Cristoloveanu
Solid-State Electronics, 2013, 84, pp.147-154. ⟨10.1016/j.sse.2013.02.010⟩
Journal articles hal-01002162v1

A systematic study of the sharp-switching Z(2)-FET device: From mechanism to modeling and compact memory applications

J. Wan , C. Le Royer , A. Zaslavsky , S. Cristoloveanu
Solid-State Electronics, 2013, 90, pp.2-11. ⟨10.1016/j.sse.2013.02.060⟩
Journal articles hal-01001944v1

Capacitance-voltage characterization of surface-treated Al2O3/GaN metal-oxide-semiconductor structures

S.B. Bae , K.W. Kim , Y.S. Lee , J.H. Lee , Y. Bae et al.
Microelectronic Engineering, 2013, 109, pp.10-12. ⟨10.1016/j.mee.2013.03.108⟩
Journal articles hal-00996410v1

Mobility Extraction in Double-Gate MOSFETs by Magnetoresistance Technique (poster)

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.
Journées "Simulation et caractérisation des nanocomposants" du GDR Nanoélectronique, 2006, Grenoble, France. pp.XX
Conference papers hal-00148279v1

Ultra-thin fully depleted SOI devices with thin BOX, ground plane and strained liner booster

C. Gallon , C. Fenouillet-Beranger , A. Vandooren , F. Bœuf , S. Monfay et al.
Com. a 2006 IEEE Int. SOI Conf, 2006, Grenoble, France. pp.XX
Conference papers hal-00146905v1

A capacitor-less 1T-DRAM on SOI based on double gate operation

M. Bawedin , S. Cristoloveanu , D. Flandre
IEEE Electron Device Letters, 2008, 29 (7, 795-798)
Journal articles hal-00391609v1

High hole mobility SGOI substrates obtained by the germanium condensation technique.

L. Souriau , T. Nguyen , E. Augendre , R. Loo , V. Terzieva et al.
3rd International Symposium on SiGe, Ge and Related Compounds: Materials, Processing, and Devices, Joint Meeting (214th ECS Meeting and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Honolulu, Hawaii, USA, Oct 2008, Honolulu, United States. pp.79-89
Conference papers hal-00392062v1

Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs.

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , A. Wild , G. Ghibaudo et al.
IEEE International SOI Conference, New Paltz, New York USA, Nov 2008, New York, United States
Conference papers hal-00392447v1

The Ge condensation technique: a solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

B. Vincent , J.F. Damlencourt , Y. Morand , A. Pouydebasque , C. Le Royer et al.
Materials Research Society (E-MRS 2008), Symposium J, Strasbourg, France (26-30 mai 2008), Materials Science in Semiconductor Processing, Elsevier, XX3-10 (2008), May 2008, -, France
Conference papers hal-00391979v1

3D size effects in advanced SOI devices

S. Cristoloveanu , R. Ritzenthaler , A. Ohata , O. Faynot
World Scientific, Selected Topics in Electronics and Systems. 3D size effects in advanced SOI devices, Frontiers in Electronics, pp.9-30, 2006
Book sections hal-00148994v1

Polarization transient response of unibond buried oxide layer

V. Tsouti , G. Papaioannou , J. Jomaah , S. Cristoloveanu , F. Balestra et al.
EUROSOI Conference, 2006, GRENOBLE, France. pp.XX
Conference papers hal-00147160v1

A systematic investigation of work function in advanced metal gate HfO2/SiO2 structures with bevel oxide

A. Kuriyama , J. Mitard , O. Faynot , L. Brevard , L. Clerc et al.
Solid-State Electronics, 2007, 51 (11-12), pp.1515-1522
Journal articles hal-00393685v1