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Mobility behavior in narrow -gate FETs devices2006 IEEE Int. SOI Conf, 2006, Grenoble, France. pp.XX
Conference papers
hal-00146913v1
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Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques.Journal of Applied Physics, 2008, 103 (XX, 034503), pp.1-5
Journal articles
hal-00391612v1
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Coupling and short-channel effect with gate-drain distance and gate lengths in triple-gate MOSFETs based on silicon-on-insulator (SOI) substrate.Joint Meeting (214th Meeting of the Electrochemical Soc. and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Symposium E1 'Solid State Divisions General Session', Honolulu, Hawaii, USA, Oct 2008, Japon, Japan
Conference papers
hal-00392072v1
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Thin film fully-depleted SOI four-gate transistorsSolid-State Electronics, 2007, 51(2), pp.278-84 (
Journal articles
hal-00393600v1
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Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF stateSolid-State Electronics, 2008, 52 (7, 1047-1051)
Journal articles
hal-00391662v1
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Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance techniqueSolid-State Electronics, 2007, 51 (11-12), pp.1494-1499
Journal articles
hal-00393713v1
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Improved GeOI substrates for pMOSFET off-state leakage controlMicroelectronic Engineering, 2009, 86 (7-9), pp.1585-1588
Journal articles
hal-00596129v1
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Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETsSolid-State Electronics, 2009, 53 (2), pp.150-153
Journal articles
hal-00596168v1
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Characterization, modelling and simulation of Sub-45nm SOI devicesInternational Semiconductor Conference, Oct 2009, Sinaia, Romania. pp.57-63
Conference papers
hal-00603670v1
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New concepts for 1T-DRAMs on SOI.Workshop on Innovative Memory Technology, MINATEC Crossroads'10, Jun 2010, Grenoble, France
Conference papers
hal-00604943v1
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Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS DevicesGDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Conference papers
hal-00604959v1
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Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs.Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press, May 2009, United States
Conference papers
hal-00603703v1
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Ultrathin SOI and GeOI Materials and Transistors. Invited paperIEEE Electron Device Society Mini-Colloquium XX,, Mar 2010, Daegu, South Korea
Conference papers
hal-00604758v1
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ESD robustness of FDSOI gated diode for ESD network design: thin or thick BOX?2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers
hal-00604644v1
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Advanced SOI and multi-gate transistors : special mechanisms and characterization.1st International Training Courses on Compact Modelling,, Jun 2010, Tarragona, Spain
Conference papers
hal-00604938v1
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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility IssuesIEEE Transactions on Electron Devices, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩
Journal articles
hal-00994552v1
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Bias-Engineered Mobility in Advanced FD-SOI MOSFETsIEEE Electron Device Letters, 2013, 34 (7), pp.840-842. ⟨10.1109/LED.2013.2264045⟩
Journal articles
hal-00994304v1
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Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETsReview of Radiation Effects in Single and Multiple-Gate SOI MOSFETs, Kluwer Academic Publishers, pp.197-214, 2005
Book sections
hal-00148988v1
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Influence of interface coupling on the mobility in FD-SOI MOSFETsNATO International Advanced Research Workshop, 2006, Ukraine, Ukraine. pp.XX
Conference papers
hal-00147174v1
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Influence of interface coupling on the mobility in FDSOI MOSFETsCom à NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Ukraine, Ukraine. pp.XX
Conference papers
hal-00147178v1
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Impact of process-induced strain in very short SOI PMOSFETsCom. a NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Grenoble, France. pp.XX
Conference papers
hal-00146919v1
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Ge-On-Insulator substrates formed by Ge condensation technique: fabrication, modeling and characterization.Invited paper, International Conference of Electronic Materials, sponsored by Int. Union of Materials Research Society (ICEM-IUMRS 2008), Sydney, Australia, Jul 2008, Sydney, Australia
Conference papers
hal-00392054v1
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Temperature, Back Gate and Polarization Studies in Nanotransistor based THz plasma detectors21st International Conference on Applied Electromagnetics and Communications ICECom, Oct 2013, Dubrovnik, Croatia. pp.1 - 6, ⟨10.1109/ICECom.2013.6684747⟩
Conference papers
hal-00955621v1
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Pseudo-MOSFET under illumination: a novel method for extraction of carrier lifetime.EuroSOI 2013, Jan 2013, Paris, France. pp.P1.2
Conference papers
hal-01067987v1
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High-K and metal-gate pMOSFETs on GeOI obtained by Ge enrichment: analysis of ON and OFF performancesIEEE Electron Device Letters, 2008, 29 (6, 635-637)
Journal articles
hal-00391663v1
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Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistorsJourn. Appl. Phys, 2007, 102 (8), pp.083712:1-7
Journal articles
hal-00393070v1
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Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.Semiconductor Science & Technology, 2010, 25, pp.075010
Journal articles
hal-00596336v1
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Advanced pMOSFET on germanium-on-insulator : low temperature properties.5th EUROSOI Workshop, Jan 2009, France. pp.1408-1411
Conference papers
hal-00603743v1
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Gate control of junction impact ionization avalanche in SOI MISFETs : theoretical model.1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine
Conference papers
hal-00604948v1
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Evaluation of electrical characteristics in fully depleted SOI MOSFETs for variable threshold voltage scheme.6th EUROSOI Workshop, Jan 2010, Grenoble, France
Conference papers
hal-00604515v1
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