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Mobility behavior in narrow ­-gate FETs devices

R. Ritzenthaleri C. Dupre X. Mescot O. Faynot T. Ernst J.C. Barbe C. Jahan L. Brevard F. Andrieux S. Deleonibus S. Cristoloveanu , R. Ritzenthaleri , C. Dupre , X. Mescot , O. Faynot et al.
2006 IEEE Int. SOI Conf, 2006, Grenoble, France. pp.XX
Conference papers hal-00146913v1

Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques.

T.V. Chandrasekhar Rao , J. Antoszewski , L. Faraone , S. Cristoloveanu , T. Nguyen et al.
Journal of Applied Physics, 2008, 103 (XX, 034503), pp.1-5
Journal articles hal-00391612v1

Coupling and short-channel effect with gate-drain distance and gate lengths in triple-gate MOSFETs based on silicon-on-insulator (SOI) substrate.

K.I. Na , S. Cristoloveanu , Y.-H. Bae , W. Xiong , C.R. Cleavelin et al.
Joint Meeting (214th Meeting of the Electrochemical Soc. and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Symposium E1 'Solid State Divisions General Session', Honolulu, Hawaii, USA, Oct 2008, Japon, Japan
Conference papers hal-00392072v1

Thin film fully-depleted SOI four-gate transistors

K. Akarvardar , S. Cristoloveanu , M. Bawedin , P. Gentil , B.J Blalock et al.
Solid-State Electronics, 2007, 51(2), pp.278-84 (
Journal articles hal-00393600v1

Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state

V. Dobrovolsky , F. Sizov , S. Cristoloveanu , S. Pavljuk
Solid-State Electronics, 2008, 52 (7, 1047-1051)
Journal articles hal-00391662v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.
Solid-State Electronics, 2007, 51 (11-12), pp.1494-1499
Journal articles hal-00393713v1

Improved GeOI substrates for pMOSFET off-state leakage control

K. Romanjek , E. Augendre , W. van den Daele , B. Grandchamp , L. Sanchez et al.
Microelectronic Engineering, 2009, 86 (7-9), pp.1585-1588
Journal articles hal-00596129v1

Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

K.I. Na , S. Cristoloveanu , Y.H. Bae , P. Patruno , W. Xiong et al.
Solid-State Electronics, 2009, 53 (2), pp.150-153
Journal articles hal-00596168v1

Characterization, modelling and simulation of Sub-45nm SOI devices

N. Rodriguez , F. Gámiz , S. Cristoloveanu
International Semiconductor Conference, Oct 2009, Sinaia, Romania. pp.57-63
Conference papers hal-00603670v1

New concepts for 1T-DRAMs on SOI.

S. Cristoloveanu , M. Bawedin , N. Rodriguez , K.-H. Park , A. Hubert et al.
Workshop on Innovative Memory Technology, MINATEC Crossroads'10, Jun 2010, Grenoble, France
Conference papers hal-00604943v1

Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS Devices

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas et al.
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Conference papers hal-00604959v1

Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs.

K.-Y. Na , S. Cristoloveanu , Y-H. Bae , W. Xiong , C.R. Cleavelin et al.
Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press, May 2009, United States
Conference papers hal-00603703v1

Ultrathin SOI and GeOI Materials and Transistors. Invited paper

S. Cristoloveanu
IEEE Electron Device Society Mini-Colloquium XX,, Mar 2010, Daegu, South Korea
Conference papers hal-00604758v1

ESD robustness of FDSOI gated diode for ESD network design: thin or thick BOX?

T. Benoist , C. Fenouillet-Beranger , P. Perreau , C. Buj , P. Galy et al.
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Conference papers hal-00604644v1

Advanced SOI and multi-gate transistors : special mechanisms and characterization.

S. Cristoloveanu
1st International Training Courses on Compact Modelling,, Jun 2010, Tarragona, Spain
Conference papers hal-00604938v1

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues

A. Villalon , C. Le Royer , S. Cristoloveanu , M. Casse , D. Cooper et al.
IEEE Transactions on Electron Devices, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩
Journal articles hal-00994552v1

Bias-Engineered Mobility in Advanced FD-SOI MOSFETs

C. Fernandez , N. Rodriguez , A. Ohata , F. Gamiz , F. Andrieu et al.
IEEE Electron Device Letters, 2013, 34 (7), pp.840-842. ⟨10.1109/LED.2013.2264045⟩
Journal articles hal-00994304v1

Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs

S. Cristoloveanu
Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs, Kluwer Academic Publishers, pp.197-214, 2005
Book sections hal-00148988v1

Influence of interface coupling on the mobility in FD-SOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon et al.
NATO International Advanced Research Workshop, 2006, Ukraine, Ukraine. pp.XX
Conference papers hal-00147174v1

Influence of interface coupling on the mobility in FDSOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon et al.
Com à NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Ukraine, Ukraine. pp.XX
Conference papers hal-00147178v1

Impact of process-induced strain in very short SOI PMOSFETs

S. Zaouia , C. Boccaccio , M. Sureddin , A.H. Perera , S. Cristoloveanu et al.
Com. a NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Grenoble, France. pp.XX
Conference papers hal-00146919v1

Ge-On-Insulator substrates formed by Ge condensation technique: fabrication, modeling and characterization.

J.F. Damlencourt , B. Vincent , C. Le Royer , P. Rivallin , E. Martinez et al.
Invited paper, International Conference of Electronic Materials, sponsored by Int. Union of Materials Research Society (ICEM-IUMRS 2008), Sydney, Australia, Jul 2008, Sydney, Australia
Conference papers hal-00392054v1

Temperature, Back Gate and Polarization Studies in Nanotransistor based THz plasma detectors

Wojciech Knap , Dmytro But , M. Bawedin , S. Chang , Oleg Klimenko et al.
21st International Conference on Applied Electromagnetics and Communications ICECom, Oct 2013, Dubrovnik, Croatia. pp.1 - 6, ⟨10.1109/ICECom.2013.6684747⟩
Conference papers hal-00955621v1

Pseudo-MOSFET under illumination: a novel method for extraction of carrier lifetime.

M. Daanoune , S. Sirajeddine , A. Diab , A. Kaminski-Cachopo , I. Ionica et al.
EuroSOI 2013, Jan 2013, Paris, France. pp.P1.2
Conference papers hal-01067987v1

High-K and metal-gate pMOSFETs on GeOI obtained by Ge enrichment: analysis of ON and OFF performances

C. Le Royer , B. Vincent , L. Clavelier , J.F. Damlencourt , C. Tabone et al.
IEEE Electron Device Letters, 2008, 29 (6, 635-637)
Journal articles hal-00391663v1

Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors

N. Rodriguez , S. Cristoloveanu , F. Gamiz
Journ. Appl. Phys, 2007, 102 (8), pp.083712:1-7
Journal articles hal-00393070v1

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.

M. Hartmann , L. Sanchez , W. van den Daele , A. Abadie , L. Baud et al.
Semiconductor Science & Technology, 2010, 25, pp.075010
Journal articles hal-00596336v1

Advanced pMOSFET on germanium-on-insulator : low temperature properties.

W. van den Daele , S. Cristoloveanu , E. Augendre , C. Le Royer , L. Clavelier et al.
5th EUROSOI Workshop, Jan 2009, France. pp.1408-1411
Conference papers hal-00603743v1

Gate control of junction impact ionization avalanche in SOI MISFETs : theoretical model.

V. Dobrovolsky , F. Sizov , S. Cristoloveanu
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine
Conference papers hal-00604948v1

Evaluation of electrical characteristics in fully depleted SOI MOSFETs for variable threshold voltage scheme.

A. Ohata , S. Cristoloveanu
6th EUROSOI Workshop, Jan 2010, Grenoble, France
Conference papers hal-00604515v1