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High-temperature performance of state-of-the-art triple-gate transistors

K. Akarvardar , A. Mercha , E. Simoen , N. Subramanian , C. Claeys et al.
Microelectronics Reliability, 2007, 47 (12), pp.2065-2069
Journal articles hal-00393582v1

Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method

A. Ohata , M. Casse , S. Cristoloveanu
Solid-State Electronics, 2007, 51(2), pp.245-251
Journal articles hal-00393599v1

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , T. Skotnicki , S. Cristoloveanu et al.
Solid-State Electronics, 2010, 54 (2), pp.123-130
Journal articles hal-00596348v1

Dynamic body potential variation in SOI MOSFETs: physics, model and applications.

M. Bawedin , S. Cristoloveanu , F. Udrea , D. Flandre
5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden
Conference papers hal-00603737v1

Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials

M. Daanoune , A. Diab , S. Sirajeddine , A. Kaminski-Cachopo , I. Ionica et al.
Journ. Appl. Phys., 2013, 113 (Issue 18), pp.183702:1-5. ⟨10.1063/1.4804064⟩
Journal articles hal-00994579v1

Silicon-On-Insulator Technology and Devices XII

G. Celler , S. Cristoloveanu , J. Fossum , F. Gamiz , K. Izumi et al.
Silicon-On-Insulator Technology and Devices XII, The Electrochem. Soc, pp.396, 2005
Book sections hal-00148989v1

Why are SCE overestimated in FD-SOI MOSFETs?

C. Navarro , M. Bawedin , F. Andrieu , B. Sagnes , S. Cristoloveanu et al.
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.304-307, ⟨10.1109/ESSDERC.2013.6818879⟩
Conference papers hal-01022509v1

RC Model for Frequency Dependence of Split C-V Measurements on Bare SOI Wafers

A. Diab , I. Ionica , G. Ghibaudo , S. Cristoloveanu
IEEE Electron Device Letters, 2013, 34 (6), pp.792-794. ⟨10.1109/LED.2013.2257663⟩
Journal articles hal-00994383v1

The meta-stable dip (MSD) effect in SOI FinFETs

J.-G. Yun , M. Bawedin , S. Cristoloveanu , D. Flandre , H.-D. Lee et al.
Microelectronic Engineering, 2007, 84 (4), pp.590-593
Journal articles hal-00393096v1

Improved ESD Protection in Advanced FDSOI by SON/Bulk Co-integration - EOS/ESD symposium 2010, september, Anaheim, CA USA

T. Benoist , C. Fenouillet-Beranger , Nicolas Guitard , J.-L. Huguenin , S. Monfray et al.
34th Annual EOS/ESD Symposium (EOS/ESD Symposium),, 2010, Anaheim, CA,, United States
Conference papers hal-00604950v1

Impact of the top surface density of states on the characteristics of ultrathin SOI pseudo-MOSFETs.

N. Rodriguez , S. Cristoloveanu , T. Nguyen , F. Gamiz
4th EUROSOI Workshop, Cork, Ireland, Jan 2008, Cork, Ireland
Conference papers hal-00392044v1

Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices

L. Donetti , F. Gamiz , S. Cristoloveanu
Solid-State Electronics, 2007, 51(9), pp.1216-1220
Journal articles hal-00393671v1

A two-dimensional model for interface coupling in triple-gate transistors

K. Akarvardar , A. Mercha , S. Cristoloveanu , E. Simoen , V. Subramanian et al.
IEEE Transactions on Electron Devices, 2007, 54 (4), pp.767-75
Journal articles hal-00392869v1

Negative transconductance in double-gate germanium-on-insulator field effect transistors

A. Zaslavsky , S. Soliveres , C. Le Royer , S. Cristoloveanu , L. Clavelier et al.
Applied Physics Letters, 2007, 91 (18), pp.183511:1-3
Journal articles hal-00392822v1

Characterization of Silicon-On-Insulator films with pseudo metal-oxide-semiconductor field-effect transistor: correlation between contact pressure, crater morphology and series resistance.

I. Savin , I. Ionica , W. van den Daele , T. Nguyen , X. Mescot et al.
Applied Physics Letters, 2008, XX (XX, XX183511), pp.1-3
Journal articles hal-00391712v1

Compact advanced SOI devices: typical mechanisms and characterization. Invited paper

S. Cristoloveanu
IEEE EDS Mini-Colloquium on 'Advanced Electron Devices Technology & Modeling', Cambridge, UK, Sep 2008, Cambridge, France
Conference papers hal-00392055v1

Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications

K. Akarvardar , Si Chen , J. Vandersand , B. Blalock , R. Schrimpf et al.
Présentée, 2006 IEEE Int. SOI Conf., 2006, Grenoble, France. pp.XX
Conference papers hal-00146909v1

Proceedings of ESSCIRC 2005, 31st European Solid-State Circuits Conference

L. Fesque , A. Kaiser , S. Cristoloveanu , M. Brillouet
Proceedings of ESSCIRC 2005, 31st European Solid-State Circuits Conference, IEEE, pp.538, 2005
Book sections hal-00148990v1

Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05)

G. Ghibaudo , T. Skotnicki , S. Cristoloveanu , M. Brillouet
Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05), IEEE/Color Press, pp.XX, 2005
Book sections hal-00148991v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.
36th European Solid-State Device Research Conference (ESSDERC'06), 2006, Genève, Switzerland. Actes pp. 367-370
Conference papers hal-00147170v1

Heterojunction-free GaN nanochannel FinFETs with high performance

K.-S. Im , Y.-W. Jo , J.-H. Lee , S. Cristoloveanu
IEEE Electron Device Letters, 2013, 34 (3), pp.381-383. ⟨10.1109/LED.2013.2240372⟩
Journal articles hal-00994314v1

Low-temperature measurements on Germanium-on-Insulator pMOSFETs: evaluation of the background doping level

W. van den Daele , E. Augendre , S. Cristoloveanu , C. Le Royer , L. Clavelier et al.
Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press (2009, May 2009, San Francisco, United States
Conference papers hal-00603712v1

Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique

J. Antoszewski , J.M. Dell , L. Faraone , S. Cristoloveanu , N. Bresson et al.
European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.300-302
Conference papers hal-00603724v1

Effective capacitance area for pseudo-MOSFET characterization of bare SOI wafers by split-C(V) measurements

C. Fernandez , N. Rodriguez , A. Ohata , F. Gamiz , S. Cristoloveanu et al.
ECS Journal of Solid State Science and Technology, 2013, 2 (12), pp.P529-P533. ⟨10.1149/2.010312jss⟩
Journal articles hal-00991667v1

Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin's technique

J. Antoszewski , J.M. Dell , L. Faraone , N. Bresson , S. Cristoloveanu et al.
Solid-State Electronics, 2010, 54 (9), pp.1047-1050
Journal articles hal-00596343v1

Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN

D.S. Kim , S.J. Chang , C.J. Lee , Y. Bae , S. Cristoloveanu et al.
Japanese Journal of Applied Physics, 2013, 52 (6), pp.061001. ⟨10.7567/JJAP.52.061001⟩
Journal articles hal-01017529v1

An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth

B. Sklenard , J.C. Barbe , P. Batude , P. Rivallin , C. Tavernier et al.
Applied Physics Letters, 2013, 102 (15), pp.151907. ⟨10.1063/1.4802203⟩
Journal articles hal-01017433v1

A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

A. Diab , C. Fernandez , A. Ohata , N. Rodriguez , I. Ionica et al.
Solid-State Electronics, 2013, 90, pp.127-133. ⟨10.1016/j.sse.2013.02.041⟩
Journal articles hal-01001928v1

Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

B. Sklenard , P. Batude , Q. Rafhay , I. Martin-Bragado , C.Q. Xu et al.
Solid-State Electronics, 2013, 88, pp.9-14. ⟨10.1016/j.sse.2013.04.018⟩
Journal articles hal-01002090v1

Mobility behavior in narrow ­-gate FETs devices

R. Ritzenthaleri C. Dupre X. Mescot O. Faynot T. Ernst J.C. Barbe C. Jahan L. Brevard F. Andrieux S. Deleonibus S. Cristoloveanu , R. Ritzenthaleri , C. Dupre , X. Mescot , O. Faynot et al.
2006 IEEE Int. SOI Conf, 2006, Grenoble, France. pp.XX
Conference papers hal-00146913v1