High-temperature performance of state-of-the-art triple-gate transistors
K. Akarvardar
,
A. Mercha
,
E. Simoen
,
N. Subramanian
,
C. Claeys
et al.
Microelectronics Reliability , 2007, 47 (12), pp.2065-2069
Journal articles
hal-00393582v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method
A. Ohata
,
M. Casse
,
S. Cristoloveanu
Solid-State Electronics , 2007, 51(2), pp.245-251
Journal articles
hal-00393599v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs
L. Pham-Nguyen
,
C. Fenouillet-Beranger
,
G. Ghibaudo
,
T. Skotnicki
,
S. Cristoloveanu
et al.
Solid-State Electronics , 2010, 54 (2), pp.123-130
Journal articles
hal-00596348v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Dynamic body potential variation in SOI MOSFETs: physics, model and applications.
M. Bawedin
,
S. Cristoloveanu
,
F. Udrea
,
D. Flandre
5th EUROSOI Workshop , Jan 2009, Göteborg, Sweden
Conference papers
hal-00603737v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials
M. Daanoune
,
A. Diab
,
S. Sirajeddine
,
A. Kaminski-Cachopo
,
I. Ionica
et al.
Journal articles
hal-00994579v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Silicon-On-Insulator Technology and Devices XII
G. Celler
,
S. Cristoloveanu
,
J. Fossum
,
F. Gamiz
,
K. Izumi
et al.
Silicon-On-Insulator Technology and Devices XII , The Electrochem. Soc, pp.396, 2005
Book sections
hal-00148989v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Why are SCE overestimated in FD-SOI MOSFETs?
C. Navarro
,
M. Bawedin
,
F. Andrieu
,
B. Sagnes
,
S. Cristoloveanu
et al.
Conference papers
hal-01022509v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
RC Model for Frequency Dependence of Split C-V Measurements on Bare SOI Wafers
A. Diab
,
I. Ionica
,
G. Ghibaudo
,
S. Cristoloveanu
Journal articles
hal-00994383v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
The meta-stable dip (MSD) effect in SOI FinFETs
J.-G. Yun
,
M. Bawedin
,
S. Cristoloveanu
,
D. Flandre
,
H.-D. Lee
et al.
Microelectronic Engineering , 2007, 84 (4), pp.590-593
Journal articles
hal-00393096v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Improved ESD Protection in Advanced FDSOI by SON/Bulk Co-integration - EOS/ESD symposium 2010, september, Anaheim, CA USA
T. Benoist
,
C. Fenouillet-Beranger
,
Nicolas Guitard
,
J.-L. Huguenin
,
S. Monfray
et al.
34th Annual EOS/ESD Symposium (EOS/ESD Symposium), , 2010, Anaheim, CA,, United States
Conference papers
hal-00604950v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Impact of the top surface density of states on the characteristics of ultrathin SOI pseudo-MOSFETs.
N. Rodriguez
,
S. Cristoloveanu
,
T. Nguyen
,
F. Gamiz
4th EUROSOI Workshop, Cork, Ireland , Jan 2008, Cork, Ireland
Conference papers
hal-00392044v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices
L. Donetti
,
F. Gamiz
,
S. Cristoloveanu
Solid-State Electronics , 2007, 51(9), pp.1216-1220
Journal articles
hal-00393671v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
A two-dimensional model for interface coupling in triple-gate transistors
K. Akarvardar
,
A. Mercha
,
S. Cristoloveanu
,
E. Simoen
,
V. Subramanian
et al.
IEEE Transactions on Electron Devices , 2007, 54 (4), pp.767-75
Journal articles
hal-00392869v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Negative transconductance in double-gate germanium-on-insulator field effect transistors
A. Zaslavsky
,
S. Soliveres
,
C. Le Royer
,
S. Cristoloveanu
,
L. Clavelier
et al.
Applied Physics Letters , 2007, 91 (18), pp.183511:1-3
Journal articles
hal-00392822v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Characterization of Silicon-On-Insulator films with pseudo metal-oxide-semiconductor field-effect transistor: correlation between contact pressure, crater morphology and series resistance.
I. Savin
,
I. Ionica
,
W. van den Daele
,
T. Nguyen
,
X. Mescot
et al.
Applied Physics Letters , 2008, XX (XX, XX183511), pp.1-3
Journal articles
hal-00391712v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Compact advanced SOI devices: typical mechanisms and characterization. Invited paper
S. Cristoloveanu
IEEE EDS Mini-Colloquium on 'Advanced Electron Devices Technology & Modeling', Cambridge, UK , Sep 2008, Cambridge, France
Conference papers
hal-00392055v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Four-gate transistor voltage-controlled negative differential resistance device and related circuit applications
K. Akarvardar
,
Si Chen
,
J. Vandersand
,
B. Blalock
,
R. Schrimpf
et al.
Présentée, 2006 IEEE Int. SOI Conf. , 2006, Grenoble, France. pp.XX
Conference papers
hal-00146909v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Proceedings of ESSCIRC 2005, 31st European Solid-State Circuits Conference
L. Fesque
,
A. Kaiser
,
S. Cristoloveanu
,
M. Brillouet
Proceedings of ESSCIRC 2005, 31st European Solid-State Circuits Conference , IEEE, pp.538, 2005
Book sections
hal-00148990v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05)
G. Ghibaudo
,
T. Skotnicki
,
S. Cristoloveanu
,
M. Brillouet
Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05) , IEEE/Color Press, pp.XX, 2005
Book sections
hal-00148991v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs
W. Chaisantikulwat
,
M. Mouis
,
G. Ghibaudo
,
S. Cristoloveanu
,
J. Widiez
et al.
36th European Solid-State Device Research Conference (ESSDERC'06) , 2006, Genève, Switzerland. Actes pp. 367-370
Conference papers
hal-00147170v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Heterojunction-free GaN nanochannel FinFETs with high performance
K.-S. Im
,
Y.-W. Jo
,
J.-H. Lee
,
S. Cristoloveanu
Journal articles
hal-00994314v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Low-temperature measurements on Germanium-on-Insulator pMOSFETs: evaluation of the background doping level
W. van den Daele
,
E. Augendre
,
S. Cristoloveanu
,
C. Le Royer
,
L. Clavelier
et al.
Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press (2009 , May 2009, San Francisco, United States
Conference papers
hal-00603712v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique
J. Antoszewski
,
J.M. Dell
,
L. Faraone
,
S. Cristoloveanu
,
N. Bresson
et al.
European Solid-State Device Research Conference , Sep 2009, Athènes, Greece. pp.300-302
Conference papers
hal-00603724v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Effective capacitance area for pseudo-MOSFET characterization of bare SOI wafers by split-C(V) measurements
C. Fernandez
,
N. Rodriguez
,
A. Ohata
,
F. Gamiz
,
S. Cristoloveanu
et al.
Journal articles
hal-00991667v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin's technique
J. Antoszewski
,
J.M. Dell
,
L. Faraone
,
N. Bresson
,
S. Cristoloveanu
et al.
Solid-State Electronics , 2010, 54 (9), pp.1047-1050
Journal articles
hal-00596343v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN
D.S. Kim
,
S.J. Chang
,
C.J. Lee
,
Y. Bae
,
S. Cristoloveanu
et al.
Journal articles
hal-01017529v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth
B. Sklenard
,
J.C. Barbe
,
P. Batude
,
P. Rivallin
,
C. Tavernier
et al.
Journal articles
hal-01017433v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration
A. Diab
,
C. Fernandez
,
A. Ohata
,
N. Rodriguez
,
I. Ionica
et al.
Journal articles
hal-01001928v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
B. Sklenard
,
P. Batude
,
Q. Rafhay
,
I. Martin-Bragado
,
C.Q. Xu
et al.
Journal articles
hal-01002090v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More
Mobility behavior in narrow -gate FETs devices
R. Ritzenthaleri C. Dupre X. Mescot O. Faynot T. Ernst J.C. Barbe C. Jahan L. Brevard F. Andrieux S. Deleonibus S. Cristoloveanu
,
R. Ritzenthaleri
,
C. Dupre
,
X. Mescot
,
O. Faynot
et al.
2006 IEEE Int. SOI Conf , 2006, Grenoble, France. pp.XX
Conference papers
hal-00146913v1
Actions
Share
Gmail
Facebook
Twitter
LinkedIn
More