Journal Articles
IEEE Electron Device Letters
Year : 2010
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https://hal.science/hal-01073558
Submitted on : Friday, October 10, 2014-9:57:06 AM
Last modification on : Friday, March 24, 2023-2:52:59 PM
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- HAL Id : hal-01073558 , version 1
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T. Bertaud, S. Blonkowski, C. Bermond, Corentin Vallée, P. Gonon, et al.. "Frequency effect on voltage linearity of ZrO2 based RF Metal-Insulator-Metal capacitors". IEEE Electron Device Letters, 2010, 31 (2), pp.114-116. ⟨hal-01073558⟩
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