"Frequency effect on voltage linearity of ZrO2 based RF Metal-Insulator-Metal capacitors" - Archive ouverte HAL Access content directly
Journal Articles IEEE Electron Device Letters Year : 2010
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hal-01073558 , version 1 (10-10-2014)

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  • HAL Id : hal-01073558 , version 1

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T. Bertaud, S. Blonkowski, C. Bermond, Corentin Vallée, P. Gonon, et al.. "Frequency effect on voltage linearity of ZrO2 based RF Metal-Insulator-Metal capacitors". IEEE Electron Device Letters, 2010, 31 (2), pp.114-116. ⟨hal-01073558⟩
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