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Article Dans Une Revue Materials Science and Engineering: B Année : 2013

Structural and luminescence correlation of annealed Er-ZnO/Si thin films deposited by AACVD process

Résumé

Er doped ZnO thin films have been synthesized from zinc acetates dihydrate (C4H6O4Zn center dot 2H(2)O) and Erbium tris (2,2,6,6-tetramethyl-3,5-heptadionate) (Er(TMHD)(3)) by aerosol assisted chemical vapor deposition AACVD atmospheric pressure technique. Films were deposited in the temperature range of [370-500 degrees C] on Si (1 1 1) substrate. Nano-disk shaped grains were grown on the top of the film surface. The morphology of the as-deposited films was found to be dependent on the substrate temperature. After annealing in air atmosphere, XRD patterns revealed a highly oriented c-axis Er:ZnO films with hexagonal wurtzite structure without any second phase. Under 488 nm excitation, the intra 4f-4f green emission (H-2(11/2), S-4(3/2) -> I-4(15/2) transitions) gradually increased with increasing annealing temperature. Also, the local structure of Er changes to a pseudo-octahedral structure with C-4v symmetry. The ZnO film with 2.504 at.% Er3+ doping has the best crystalline structure and the best resolved PL spectra. Using 325 nm excitation, all the samples showed an ultraviolet emission centered at 380 nm originating from a near band EDGE emission and a broad band green emission centered at 520 nm from deep levels. The optical response was correlated with crystallinity of the synthesized thin films. (C) 2013 Elsevier B.V. All rights reserved.

Domaines

Matériaux

Dates et versions

hal-01067595 , version 1 (23-09-2014)

Identifiants

Citer

R. Elleuch, R. Salhi, N. Maalej, J. L. Deschanvres, R. Maalej. Structural and luminescence correlation of annealed Er-ZnO/Si thin films deposited by AACVD process. Materials Science and Engineering: B, 2013, 178 (17), pp.1124-1129. ⟨10.1016/j.mseb.2013.07.005⟩. ⟨hal-01067595⟩
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