Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling - FMNT - Fédération Micro- et Nano- Technologies Accéder directement au contenu
Article Dans Une Revue Journ. Appl. Phys. Année : 2013

Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling

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hal-01017535 , version 1 (02-07-2014)

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W. van den Daele, C. Malaquin, N. Baumel, O. Kononchuk, S. Cristoloveanu. Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling. Journ. Appl. Phys., 2013, 114 (16), pp.164502:1-9. ⟨10.1063/1.4826631⟩. ⟨hal-01017535⟩
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