Journal Articles
Japanese Journal of Applied Physics
Year : 2013
Brigitte Rasolofoniaina : Connect in order to contact the contributor
https://hal.science/hal-01017529
Submitted on : Wednesday, July 2, 2014-4:25:25 PM
Last modification on : Tuesday, February 7, 2023-2:44:51 PM
Cite
D.S. Kim, S.J. Chang, C.J. Lee, Y. Bae, S. Cristoloveanu, et al.. Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN. Japanese Journal of Applied Physics, 2013, 52 (6), pp.061001. ⟨10.7567/JJAP.52.061001⟩. ⟨hal-01017529⟩
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