Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN - Archive ouverte HAL Access content directly
Journal Articles Japanese Journal of Applied Physics Year : 2013

Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN

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hal-01017529 , version 1 (02-07-2014)

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D.S. Kim, S.J. Chang, C.J. Lee, Y. Bae, S. Cristoloveanu, et al.. Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN. Japanese Journal of Applied Physics, 2013, 52 (6), pp.061001. ⟨10.7567/JJAP.52.061001⟩. ⟨hal-01017529⟩
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