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Article Dans Une Revue Solid-State Electronics Année : 2013

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

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hal-01002176 , version 1 (05-06-2014)

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M. Koyama, M. Casse, R. Coquand, S. Barraud, C. Vizioz, et al.. Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs. Solid-State Electronics, 2013, 84, pp.46-52. ⟨10.1016/j.sse.2013.02.024⟩. ⟨hal-01002176⟩
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