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Journal Articles Solid-State Electronics Year : 2013

Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

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hal-01002090 , version 1 (05-06-2014)

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B. Sklenard, P. Batude, Q. Rafhay, I. Martin-Bragado, C.Q. Xu, et al.. Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs. Solid-State Electronics, 2013, 88, pp.9-14. ⟨10.1016/j.sse.2013.04.018⟩. ⟨hal-01002090⟩
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