Journal Articles
Solid-State Electronics
Year : 2013
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https://hal.science/hal-01002090
Submitted on : Thursday, June 5, 2014-3:20:01 PM
Last modification on : Tuesday, February 7, 2023-2:44:51 PM
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B. Sklenard, P. Batude, Q. Rafhay, I. Martin-Bragado, C.Q. Xu, et al.. Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs. Solid-State Electronics, 2013, 88, pp.9-14. ⟨10.1016/j.sse.2013.04.018⟩. ⟨hal-01002090⟩
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