A systematic study of the sharp-switching Z(2)-FET device: From mechanism to modeling and compact memory applications - FMNT - Fédération Micro- et Nano- Technologies Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2013

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hal-01001944 , version 1 (05-06-2014)

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J. Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu. A systematic study of the sharp-switching Z(2)-FET device: From mechanism to modeling and compact memory applications. Solid-State Electronics, 2013, 90, pp.2-11. ⟨10.1016/j.sse.2013.02.060⟩. ⟨hal-01001944⟩
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