Journal Articles
Journ. Appl. Phys.
Year : 2013
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https://hal.science/hal-00994579
Submitted on : Wednesday, May 21, 2014-4:54:22 PM
Last modification on : Tuesday, February 7, 2023-2:44:50 PM
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M. Daanoune, A. Diab, S. Sirajeddine, A. Kaminski-Cachopo, I. Ionica, et al.. Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials. Journ. Appl. Phys., 2013, 113 (Issue 18), pp.183702:1-5. ⟨10.1063/1.4804064⟩. ⟨hal-00994579⟩
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