Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors - Archive ouverte HAL Access content directly
Journal Articles Journ. Appl. Phys. Year : 2013

Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

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hal-00994570 , version 1 (21-05-2014)

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A. Ohata, N. Rodriguez, C. Navarro, L. Donetti, F. Gamiz, et al.. Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. Journ. Appl. Phys., 2013, 113 (14), pp.144514. ⟨10.1063/1.4799612⟩. ⟨hal-00994570⟩
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