Journal Articles
Journ. Appl. Phys.
Year : 2013
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https://hal.science/hal-00994570
Submitted on : Wednesday, May 21, 2014-4:45:02 PM
Last modification on : Tuesday, October 19, 2021-10:59:17 AM
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A. Ohata, N. Rodriguez, C. Navarro, L. Donetti, F. Gamiz, et al.. Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. Journ. Appl. Phys., 2013, 113 (14), pp.144514. ⟨10.1063/1.4799612⟩. ⟨hal-00994570⟩
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