Effective capacitance area for pseudo-MOSFET characterization of bare SOI wafers by split-C(V) measurements - Archive ouverte HAL Access content directly
Journal Articles ECS Journal of Solid State Science and Technology Year : 2013

Effective capacitance area for pseudo-MOSFET characterization of bare SOI wafers by split-C(V) measurements

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hal-00991667 , version 1 (15-05-2014)

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C. Fernandez, N. Rodriguez, A. Ohata, F. Gamiz, S. Cristoloveanu. Effective capacitance area for pseudo-MOSFET characterization of bare SOI wafers by split-C(V) measurements. ECS Journal of Solid State Science and Technology, 2013, 2 (12), pp.P529-P533. ⟨10.1149/2.010312jss⟩. ⟨hal-00991667⟩
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