Journal Articles
ECS Journal of Solid State Science and Technology
Year : 2013
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https://hal.science/hal-00991667
Submitted on : Thursday, May 15, 2014-4:48:19 PM
Last modification on : Saturday, February 25, 2023-4:36:15 AM
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C. Fernandez, N. Rodriguez, A. Ohata, F. Gamiz, S. Cristoloveanu. Effective capacitance area for pseudo-MOSFET characterization of bare SOI wafers by split-C(V) measurements. ECS Journal of Solid State Science and Technology, 2013, 2 (12), pp.P529-P533. ⟨10.1149/2.010312jss⟩. ⟨hal-00991667⟩
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