Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas - FMNT - Fédération Micro- et Nano- Technologies Accéder directement au contenu
Article Dans Une Revue Journal of Vacuum Science and Technology Année : 2013
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hal-00968781 , version 1 (01-04-2014)

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R. Blanc, F. Leverd, T. David, O. Joubert. Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas. Journal of Vacuum Science and Technology, 2013, B 31, pp.051801. ⟨10.1116/1.4816466⟩. ⟨hal-00968781⟩
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