PECVD of GeTe for next generation of non volatile memory - Archive ouverte HAL Access content directly
Conference Papers Year :

PECVD of GeTe for next generation of non volatile memory

(1) , (1) , (1) , (2) , , , (3)
1
2
3
Not file

Dates and versions

hal-00925819 , version 1 (08-01-2014)

Identifiers

  • HAL Id : hal-00925819 , version 1

Cite

Corentin Vallée, L. Dussault, E. Despiau-Pujo, E. Gourvest, D. Jourde, et al.. PECVD of GeTe for next generation of non volatile memory. 18th International Colloquium on Plasma Processes (CIP), Jul 2011, rennes, France. ⟨hal-00925819⟩
65 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More