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Article Dans Une Revue Journal of Applied Physics Année : 2011

Ultra wide band frequency characterization of integrated TiTaO-based metal-insulator-metal devices

Résumé

The titanium tantalum oxide, TiTaO, was fully characterized in situ in an integrated metal-insulator-metal (MIM) configuration on a wide frequency band, from 1 mHz to 30 GHz. First, XPS and XRD analysis show that TiTaO dielectric is amorphous and presents Ti-O, Ta-O, and Ti-Ta bounds. Next, by using dedicated MIM test devices and a specific extraction procedure, both relative permittivity κ and loss tangent tanδ were extracted on the wide frequency band. The results show a dependence on both frequency and thickness. Conduction mechanism of ion impurities such as oxygen vacancies at very low frequencies (below 0.1 Hz), Maxwell-Wagner relaxations due to space charges at electrode interface (between 0.1 and 5 Hz), and dielectric grain boundaries or hopping (between 1 and 100 MHz) are underlined and studied with temperature measurements. The paper shows the usefulness of in situ wideband frequency measurements and that the dielectric permittivity of TiTaO in a 100 nm thick film is decreasing from 86 at 10 kHz to 20 at 10 GHz.
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Dates et versions

hal-00849729 , version 1 (09-05-2022)

Identifiants

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Thomas Bertaud, Cedric Bermond, Fatiha Challali, Antoine Goullet, Christophe Vallee, et al.. Ultra wide band frequency characterization of integrated TiTaO-based metal-insulator-metal devices. Journal of Applied Physics, 2011, 110 (4), pp.044110. ⟨10.1063/1.3626067⟩. ⟨hal-00849729⟩
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