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Article Dans Une Revue Materials Science Forum Année : 2012

Hexagonal faceted SiC nanopillars fabricated by inductively coupled SF$_6$/O$_2$ plasma method

Résumé

We demonstrate a top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars by using inductively coupled SF6/O2 plasma etching. The obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars obtained under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni mask). We obtained hexagonal symmetry of SiC nanopillar, which might be attributed to the crystallographic structure of the SiC phase.
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Dates et versions

hal-00650069 , version 1 (13-10-2022)

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John H Choi, Laurence Latu-Romain, Thierry Baron, Thierry Chevolleau, Edwige Bano. Hexagonal faceted SiC nanopillars fabricated by inductively coupled SF$_6$/O$_2$ plasma method. Materials Science Forum, 2012, 717-720, pp.893-896. ⟨10.4028/www.scientific.net/MSF.717-720.893⟩. ⟨hal-00650069⟩
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