Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs. - Archive ouverte HAL Access content directly
Conference Papers Year : 2009

Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs.

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K.-Y. Na
  • Function : Author
Y-H. Bae
  • Function : Author
W. Xiong
  • Function : Author
C.R. Cleavelin
  • Function : Author
P. Patruno
  • Function : Author
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Dates and versions

hal-00603703 , version 1 (27-06-2011)

Identifiers

  • HAL Id : hal-00603703 , version 1

Cite

K.-Y. Na, S. Cristoloveanu, Y-H. Bae, W. Xiong, C.R. Cleavelin, et al.. Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs.. Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press, May 2009, United States. ⟨hal-00603703⟩
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