Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors - Archive ouverte HAL Access content directly
Conference Papers Year : 2009

Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

(1) , , , (2) , (3) , , (4) , (5) , (3)
1
2
3
4
5
C. Bermond
T. Lacrevaz
B. Fléchet
Not file

Dates and versions

hal-00602814 , version 1 (23-06-2011)

Identifiers

  • HAL Id : hal-00602814 , version 1

Cite

T. Bertaud, C. Bermond, T. Lacrevaz, Corentin Vallée, Y. Morand, et al.. Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors. 18th Materials for Advanced Metallization Conference, Mar 2009, Grenoble, France. ⟨hal-00602814⟩
155 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More