Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2010
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hal-00596348 , version 1 (27-05-2011)

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  • HAL Id : hal-00596348 , version 1

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L. Pham-Nguyen, C. Fenouillet-Beranger, G. Ghibaudo, T. Skotnicki, S. Cristoloveanu. Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs. Solid-State Electronics, 2010, 54 (2), pp.123-130. ⟨hal-00596348⟩
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