Journal Articles
Solid-State Electronics
Year : 2010
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https://hal.science/hal-00596348
Submitted on : Friday, May 27, 2011-10:02:46 AM
Last modification on : Tuesday, October 19, 2021-10:59:17 AM
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- HAL Id : hal-00596348 , version 1
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L. Pham-Nguyen, C. Fenouillet-Beranger, G. Ghibaudo, T. Skotnicki, S. Cristoloveanu. Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs. Solid-State Electronics, 2010, 54 (2), pp.123-130. ⟨hal-00596348⟩
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