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Journal Articles Microelectronic Engineering Year : 2009

Improved GeOI substrates for pMOSFET off-state leakage control

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hal-00596129 , version 1 (26-05-2011)

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  • HAL Id : hal-00596129 , version 1

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K. Romanjek, E. Augendre, W. van den Daele, B. Grandchamp, L. Sanchez, et al.. Improved GeOI substrates for pMOSFET off-state leakage control. Microelectronic Engineering, 2009, 86 (7-9), pp.1585-1588. ⟨hal-00596129⟩
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