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Etch mechanisms of SiOC and selectivity to SiO2 and SiC in fluoro carbon based Plasmas

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hal-00486345 , version 1 (25-05-2010)

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  • HAL Id : hal-00486345 , version 1

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B. Pelissier, C. Durand, Corentin Vallée, M. Bonvalot, L. Vallier, et al.. Etch mechanisms of SiOC and selectivity to SiO2 and SiC in fluoro carbon based Plasmas. 49th International AVS Symposium & Topical Conferences, 2002, Denver, United States. ⟨hal-00486345⟩
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