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Pulsed Injection Plasma Enhanced MOCVD of high k Y2O3 layers for gate dielectric Application

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hal-00486337 , version 1 (25-05-2010)

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  • HAL Id : hal-00486337 , version 1

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C. Durand, B. Pelissier, Corentin Vallée, M. Bonvalot, L. Vallier, et al.. Pulsed Injection Plasma Enhanced MOCVD of high k Y2O3 layers for gate dielectric Application. 49th International AVS Symposium & Topical Conferences, 2002, Denver, United States. ⟨hal-00486337⟩
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