Mechanical and electrical analysis of strained liner effect in 35 nm fully depleted silicon-on-insulator devices with ultra thin silicon channels - Archive ouverte HAL Access content directly
Journal Articles Japanese Journal of Applied Physics Year : 2006

Mechanical and electrical analysis of strained liner effect in 35 nm fully depleted silicon-on-insulator devices with ultra thin silicon channels

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C. Gallon
  • Function : Author
C. Fenouillet-Beranger
  • Function : Author
S. Denorme
  • Function : Author
F. Boeuf
  • Function : Author
V. Fiori
  • Function : Author
N. Loubet
  • Function : Author
A. Vandooren
  • Function : Author
T. Kormann
  • Function : Author
M. Broekaart
  • Function : Author
P. Gouraud
  • Function : Author
F. Leverd
  • Function : Author
G. Imbert
  • Function : Author
C. Chaton
  • Function : Author
C. Laviron
  • Function : Author
L. Gabette
  • Function : Author
F. Vigilant
  • Function : Author
P. Garnier
  • Function : Author
H. Bernard
  • Function : Author
A. Tarnowka
  • Function : Author
R. Pantel
  • Function : Author
F. Pionnier
  • Function : Author
S. Cristoloveanu
T. Skotnicki
  • Function : Author
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Dates and versions

hal-00466356 , version 1 (23-03-2010)

Identifiers

  • HAL Id : hal-00466356 , version 1

Cite

C. Gallon, C. Fenouillet-Beranger, S. Denorme, F. Boeuf, V. Fiori, et al.. Mechanical and electrical analysis of strained liner effect in 35 nm fully depleted silicon-on-insulator devices with ultra thin silicon channels. Japanese Journal of Applied Physics, 2006, pp.Part1- 45 Issue: 4B (2006) 3058-3063. ⟨hal-00466356⟩
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