3D AFM Characterization of the Edge Roughness of Silicon High Q Resonators - Archive ouverte HAL Access content directly
Conference Papers Year : 2010

3D AFM Characterization of the Edge Roughness of Silicon High Q Resonators

(1, 2) , (2) , (3) , (3) , (3) , (3)
1
2
3

Abstract

Nanophotonic resonators are very sensitive to sidewall roughness. We investigate in detail the sidewall roughness, correlation length and fractal roughness exponent for high Q silicon resonators using a 3D AFM
Fichier principal
Vignette du fichier
abstract_cleo2010_roughness_2.pdf (280.8 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-00462233 , version 1 (08-03-2010)

Identifiers

  • HAL Id : hal-00462233 , version 1

Cite

P. Schiavone, M. Martin, P. Alipour, A.A Eftekhar, S. Yegnanarayanan, et al.. 3D AFM Characterization of the Edge Roughness of Silicon High Q Resonators. Conference on Lasers and Electro-Optics 2010, May 2010, San Jose (CA), United States. ⟨hal-00462233⟩
101 View
142 Download

Share

Gmail Facebook Twitter LinkedIn More