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Conference Papers Year : 2010

OPC model error study through mask and SEM measurement error

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Mask and metrology errors such as SEM (Scanning Electron Microscopy) measurement errors are currently not accounted for when calibrating OPC models. Nevertheless, they can lead to erroneous model parameters therefore causing inaccuracies in the model prediction if these errors are of the same order of magnitude than targeted modeling accuracy. In this study, we used a dedicated design of hundreds of features exposed through a Focus Exposure Matrix (FEM). We measured the mask bias from target for these structures and investigated its impact on the model accuracy. For the metrology error, we compared the SEM measurements to AFM measurements for as much as 105 features exposed in various process conditions of dose and defocus. These data have then been used in a OPC model calibration procedure. We show that the impact of the metrology error is not negligible and demonstrate the importance of taking into account these errors in order to improve the reliability of the OPC models.
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hal-00462229 , version 1 (08-03-2010)


  • HAL Id : hal-00462229 , version 1


Mame Kouna Top, David Fuard, Vincent Farys, Yorick Trouiller, Patrick Schiavone. OPC model error study through mask and SEM measurement error. Metrology, Inspection, and Process Control for Microlithography XXIV, Feb 2010, San Jose (CA), United States. in press. ⟨hal-00462229⟩
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