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Article Dans Une Revue European Physical Journal: Applied Physics Année : 2005

Effect of nitrogen addition on the properties of C:F thin films deposited by RF sputtering

Résumé

Fluorocarbon (C:F) and nitrogen-doped fluorocarbon (C:F:N) thin films are deposited by RF magnetron sputtering using a polytetrafluoroethylene (PTFE) target and Ar or Ar/N2 sputtering gas. Properties of C:F:N films are compared to those of C:F films. They are studied using X-ray Photoelectron Spectroscopy (XPS), Infra-Red (IR) transmission spectroscopy, Thermo-Gravimetric Analysis (TGA), impedance spectroscopy, and current-voltage measurements. By adding nitrogen to the sputtering gas, XPS shows that nitrogen substitutes for fluorine leading to a decrease in the relative concentration of CFx species, to an increase in C-C bonds, and to the appearance of specific CFN bonds. There is also a new IR band at 1350 cm-1 whose origin is uncertain (CN bonds or disordered sp2 carbon). Thermal stability is not improved upon nitrogen addition (the C:F and C:F:N films both decompose above 200 °C). Dielectric properties (dielectric constant and loss) are only slightly affected by nitrogen doping. The DC transport properties are modified upon nitrogen addition (C:F:N films display a higher resistivity and a supra-linear behaviour at high fields indicative of field-enhanced tunnelling transport).
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hal-00394679 , version 1 (01-03-2024)

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P. Gonon. Effect of nitrogen addition on the properties of C:F thin films deposited by RF sputtering. European Physical Journal: Applied Physics, 2005, 32 (1), pp.15. ⟨10.1051/epjap:2005067⟩. ⟨hal-00394679⟩
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