Journal Articles
Solid-State Electronics
Year : 2007
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https://hal.science/hal-00393599
Submitted on : Tuesday, June 9, 2009-3:56:07 PM
Last modification on : Tuesday, October 19, 2021-10:59:14 AM
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- HAL Id : hal-00393599 , version 1
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A. Ohata, M. Casse, S. Cristoloveanu. Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method. Solid-State Electronics, 2007, 51(2), pp.245-251. ⟨hal-00393599⟩
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