Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2007

Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method

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hal-00393599 , version 1 (09-06-2009)

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  • HAL Id : hal-00393599 , version 1

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A. Ohata, M. Casse, S. Cristoloveanu. Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method. Solid-State Electronics, 2007, 51(2), pp.245-251. ⟨hal-00393599⟩
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