Coupling and short-channel effect with gate-drain distance and gate lengths in triple-gate MOSFETs based on silicon-on-insulator (SOI) substrate. - Archive ouverte HAL Access content directly
Conference Papers Year : 2008

Coupling and short-channel effect with gate-drain distance and gate lengths in triple-gate MOSFETs based on silicon-on-insulator (SOI) substrate.

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1
K.I. Na
  • Function : Author
Y.-H. Bae
  • Function : Author
W. Xiong
  • Function : Author
C.R. Cleavelin
  • Function : Author
P. Patruno
  • Function : Author
J.-H. Lee
  • Function : Author
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Dates and versions

hal-00392072 , version 1 (05-06-2009)

Identifiers

  • HAL Id : hal-00392072 , version 1

Cite

K.I. Na, S. Cristoloveanu, Y.-H. Bae, W. Xiong, C.R. Cleavelin, et al.. Coupling and short-channel effect with gate-drain distance and gate lengths in triple-gate MOSFETs based on silicon-on-insulator (SOI) substrate.. Joint Meeting (214th Meeting of the Electrochemical Soc. and 2008 Fall Meeting of the Electrochemical Soc. of Japan), Symposium E1 'Solid State Divisions General Session', Honolulu, Hawaii, USA, Oct 2008, Japon, Japan. ⟨hal-00392072⟩
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