Investigation of mobility enhancement effect in process-induced strained ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors. - Archive ouverte HAL Access content directly
Journal Articles Japanese Journal of Applied Physics Year : 2008

Investigation of mobility enhancement effect in process-induced strained ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

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hal-00391667 , version 1 (04-06-2009)

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  • HAL Id : hal-00391667 , version 1

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A. Ohata, C. Gallon, C. Fenouillet-Beranger, S. Cristoloveanu. Investigation of mobility enhancement effect in process-induced strained ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors.. Japanese Journal of Applied Physics, 2008, 47 (4, XX-XX). ⟨hal-00391667⟩
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