Journal Articles
Japanese Journal of Applied Physics
Year : 2008
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https://hal.science/hal-00391667
Submitted on : Thursday, June 4, 2009-2:12:55 PM
Last modification on : Tuesday, October 19, 2021-10:59:14 AM
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- HAL Id : hal-00391667 , version 1
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A. Ohata, C. Gallon, C. Fenouillet-Beranger, S. Cristoloveanu. Investigation of mobility enhancement effect in process-induced strained ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors.. Japanese Journal of Applied Physics, 2008, 47 (4, XX-XX). ⟨hal-00391667⟩
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