Interface formation during the yttrium oxide deposition on Si by pulsed liquid-injection plasma enhanced metal organic chemical vapor deposition - Archive ouverte HAL Access content directly
Journal Articles Journal of Vacuum Science & Technology A Year : 2004

Interface formation during the yttrium oxide deposition on Si by pulsed liquid-injection plasma enhanced metal organic chemical vapor deposition

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hal-00135411 , version 1 (07-03-2007)

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C. Durand, Corentin Vallée, C. Dubourdieu, E. Gautier, M. Bonvalot, et al.. Interface formation during the yttrium oxide deposition on Si by pulsed liquid-injection plasma enhanced metal organic chemical vapor deposition. Journal of Vacuum Science & Technology A, 2004, 22(6), pp.2490-2499. ⟨10.1116/1.1810163⟩. ⟨hal-00135411⟩
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