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Communication Dans Un Congrès Année : 2017

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

Résumé

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

Dates et versions

hal-01584649 , version 1 (09-09-2017)

Identifiants

Citer

T. Wang, P. Rymaszewski, M. Barbero, Y. Degerli, S. Godiot, et al.. Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade. Topical Workshop on Electronics for Particle Physics, Sep 2016, Karlsruhe, Germany. pp.C01039, ⟨10.1088/1748-0221/12/01/C01039⟩. ⟨hal-01584649⟩
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